It was originally made in the TO-18 metal can as shown in the picture. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It has three terminals named as: Emitter. It's a Bipolar junction transistor abbreviated as BJT. It is designed for high-speed switching applications at collector currents up to 500 MA and features useful current gain over a wide range of collector current, low leakage currents, and low saturation voltages.ĢN2222 is an NPN transistor, which means it has a single P doped layer embedded between two N doped layers. You can download the datasheet of 2N2222 from the link given below:ĢN2222 FAQ What are 2N2222 High-Speed Switches ?ĢN2222 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal cases. * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. (T amb = 25 ☌ unless otherwise specified) SymbolĬolllector-base Breakdown Voltage (I E = 0)Ĭollector-emitter Breakdown Voltage (IB = 0)Įmittter-base Breakdown Voltage (I C = 0) They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages.ĢN2218/2N2219 approved to CECC 50002-100, 2N2221/2N2222 approved to CECC 50002-101 available on request. The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases.
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